| 摘要 |
PROBLEM TO BE SOLVED: To prevent a junction transistor that becomes a leak current path to a source region from being composed. SOLUTION: A solid-state image pickup device including a photoelectric conversion element PD and a transistor TM formed adjacent to the photoelectric conversion element comprises a one-conductivity-type substrate 1, a first inverse-conductivity-type well 21 formed on the substrate 1 at the formation region of the photoelectric conversion element, a second one-conductivity-type well 4 formed on the first well 21, a third inverse-conductivity-type well 21' that is formed on the substrate 1 in the formation region of the transistor and is formed adjacent to the first well 21, a fourth one-conductivity-type well 5 that is formed on the third well 21' and is formed adjacent to the second well 4, a gate electrode 6 that is formed at the upper portion of the fourth well 5 and has an opening, a source 7 formed at the lower portion of the opening, a drain 8 that is formed separately from the source 7 and is electrically connected to the third well 21', and an insulating layer 28 formed at the lower portion of the source 21'. COPYRIGHT: (C)2005,JPO&NCIPI
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