| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a memory effect because of a doping with a high concentration in Mg in a compound semiconductor forming a film by an organometallic vapor-phase crystal growth device. SOLUTION: A raw material supply system connected to a reaction furnace is formed in a system structure having piping and paths in which three systems composed of a group III organometallic compound (MO:TMGa, TMAl, TMI, etc.) supply system, a group V compound (PH<SB>3</SB>, AsH<SB>3</SB>, etc.) supply system and a doping substance (Cp<SB>2</SB>Mg, SiH<SB>4</SB>, Si<SB>2</SB>H<SB>5</SB>, etc.) supply system are separated and made to be independent respectively. The raw material supply system is formed in a separate structure, in which even raw-material introducing nozzles into the reaction furnace are made to be independent in three systems completely, while being formed in a structure in which exclusive piping for Cp<SB>2</SB>Mg and Cp<SB>2</SB>Mg introducing paths for injection nozzles are heat-insulated and controlled at a temperature (a constant or a certain range) in an extent that Cp<SB>2</SB>Mg is not coagulated and decomposed. COPYRIGHT: (C)2005,JPO&NCIPI
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