| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor element designed to be fully miniaturized with its mechanical strength sustained, and to provide a method for manufacturing the same. <P>SOLUTION: A semiconductor photodetector PD1 has an epitaxial layer 1 and a laminated structure LS1. The epitaxial layer 1 is made of a 50-100 μm-thick undoped GaAlAs (Al composition≥0.4) or an undoped AlAs of the same kind. The laminated structure LS1 is formed on the epitaxial layer 1, and includes an n-type high-cocentration carrier layer 3, an n-type light-absorbing layer 5, and an n-type cap layer 7. These are successively deposited. The epitaxial layer 1 is formed on a semiconductor substrate, and the semiconductor substrate is removed after the formation of the laminated structure LS1 on the epitaxial layer 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
