| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride based group III-V compound semiconductor light emitting element in which the scattering radiation amount of light is increased, and to provide its manufacturing method. <P>SOLUTION: A method for manufacturing a gallium nitride based light emitting element comprises a first step for forming a buffer layer on a sapphire or silicon carbide substrate and then growing an n-GaN based epitaxial precipitation layer on the buffer layer, a second step for forming a multi quantum well active layer on the precipitation layer, a third step for growing a p-GaN based epitaxial precipitation layer on the active layer and then removing the surface of a part of n-GaN layer, a part of the multi quantum well active layer and a part of the p-GaN layer such that the n-GaN layer has an exposed surface, a fourth step for plating a thin Ni/Au layer on the remaining p-GaN layer, a fifth step for plating a ZnO based window layer having a thickness of 1 μm or above on the Ni/Au layer serving as an ohmic contact layer between the ZnO based window layer and the p-GaN layer, and a sixth step for treating the exposed surface of the ZnO based window layer such that the exposed surface is roughened or has an embossed pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
