| 摘要 |
A semiconductor laser has a ridge stripe region 150 with laminated structure 170 and first and second stripe-side regions 151, 152 . The ridge stripe region 150 on a semiconductor substrate has a lower cladding layer, active layer, and upper cladding area. The first stripe side regions 151 are disposed on both outer sides of a ridge stripe region 150 . The second stripe-side regions are disposed on both outer sides of the first stripe-side regions 151 . A thickness from a lower surface of the upper cladding region to a lower surface of a buried layer 115 in the second stripe-side region is smaller than that in the first stripe-side region. A width of the first stripe side region 151 is larger in a middle portion of an oscillator than in a light emitting edge.
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