发明名称 Capacitor and semiconductor device and method for fabricating the semiconductor device
摘要 A capacitor comprises a first conducting film 12 formed on a substrate 10 , a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.
申请公布号 US2005156279(A1) 申请公布日期 2005.07.21
申请号 US20050059469 申请日期 2005.02.16
申请人 FUJITSU LIMITED 发明人 SHIOGA TAKESHI;KARASAWA KAZUAKI;KURIHARA KAZUAKI
分类号 H01L21/02;H01L21/768;H01L23/498;H01L23/50;H01L23/522;H01L23/64;H01L27/08;(IPC1-7):H01L29/00;H01L21/338 主分类号 H01L21/02
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