| 发明名称 |
METHOD FOR FORMING NON-AMORPHOUS, ULTRA-THIN SEMICONDUCTOR DEVICES USING SACRIFICIAL IMPLANTATION LAYER |
| 摘要 |
<p>A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).</p> |
| 申请公布号 |
WO2005067035(A1) |
申请公布日期 |
2005.07.21 |
| 申请号 |
WO2003US38559 |
申请日期 |
2003.12.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;DOKUMACI, OMER, H.;RONSHEIM, PAUL |
发明人 |
DOKUMACI, OMER, H.;RONSHEIM, PAUL |
| 分类号 |
H01L21/225;H01L21/265;H01L21/28;H01L21/336;H01L21/8242;H01L29/423;H01L29/786;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/225 |
| 代理机构 |
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