| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a thin film having uniform crystallization characteristics without X-overlap and Y-overlap by applying a slit having a certain pattern to a mask and proceeding with the laser crystallization, taking such a slit repeatability into account. <P>SOLUTION: The laser crystallization method includes steps of: supplying a substrate on which a semiconductor film is formed; positioning the mask characterized in that the pattern comprises three blocks having periodic patterns including a plurality of transmitting areas and one blocking area on the substrate, and of the three blocks, the periodic pattern of a first block has a first position, the periodic pattern of a second block has a second position, the periodic pattern of a third block has a third position, and these positions are different from each other; and crystallizing the semiconductor film by irradiating a laser beam through the mask. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
