POLYCRYSTALLINE SILICON SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME

摘要

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon semiconductor device and a manufacturing method of the same. SOLUTION: An unnecessary silicon substance at portions other than a gate is removed in a manufacturing process in order to decrease parasitic capacitance caused by a silicon substance layer which exists in a line for gate-sharing. The silicon substance layer locally exists only in the lower part of the gate. Consequently, a decrease in the parasitic capacitance suppresses signal delay to provide a polycrystalline silicon semiconductor device of a thin film transistor having good electrical properties. COPYRIGHT: (C)2005,JPO&NCIPI