BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE THEREWITH, AND THESE MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To reduce base resistance, as well as to prevent the variation in the current gain of a bipolar transistor, by an easy method. SOLUTION: After forming a base layer on a semiconductor substrate, an opening for taking out a base electrode and an opening for taking out an emitter electrode are simultaneously formed in an insulator layer laminated on the base layer. Subsequently, a section for taking out the base electrode is formed in the opening for taking out the base electrode, and a section for taking out the emitter electrode is formed in the opening for taking out the emitter electrode. COPYRIGHT: (C)2005,JPO&NCIPI