| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for performing the forming of a through-hole pattern wherein its lighting condition can be optimized independently of the denseness and rareness of the through-hole pattern, and it is made simple and stable since the correction of any mask used in it is not required. SOLUTION: The method has a process for forming on an interlayer insulation film 3 to form therein a through hole 8 a mask film 4 to become an etching stopper, a process for removing then previously the portion of the mask film wherein the through hole is to be formed, a process for so forming thereafter by usual lithography processes the pattern of a resist 5 which comprises only a dense pattern as to perform the etching of the through holes, a process for removing thereafter the resist film, and a process for removing the mask film, if necessary. COPYRIGHT: (C)2005,JPO&NCIPI
|
