| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for fully activating impurities without thermally damaging a gate electrode even if photo-annealing is used. SOLUTION: When manufacturing a polycrystalline silicon TFT1, a gate electrode 6 is formed using silver as a conductive material having a wavelength of 300-700 nm and an average reflection factor of 50% or higher. Then, high-intensity light is applied from a side on which the gate electrode 6 is formed, a polycrystalline silicon film 4 is annealed via a gate insulating film 5, and impurities introduced to the polycrystalline silicon film 4 are activated. Since the gate electrode 6 reflects the large part of light, it is not thermally damaged. COPYRIGHT: (C)2005,JPO&NCIPI
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