| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device with a tag block which allows fast access to be performed, a circuit area to be decreased using one row decoder, and a control circuit to be readily controlled. SOLUTION: This device is provided with a cell block 1000 composed of nine unit cell blocks having word lines, a spare cell block table 200 storing information concerning which one of the word lines is made into a spare word line, a row decoder 700 decoding an address in order to select a word line of a unit cell block, and a tag block 740 converting a logical cell block address into a physical cell block address. Further, the device is provided with a decoding address latch block 800 activating the word line corresponding to a decoded value in the unit cell block corresponding to the physical cell block address, and a control section 400 for activating the word line and a spare word line for this in the selected unit cell block. COPYRIGHT: (C)2005,JPO&NCIPI
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