| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory element which allows unnecessary power consumption associated with an operation in a self refresh mode to be reduced. SOLUTION: This element is provided with a self refresh demand signal generating means 100 which generates a fundamental period signal f1 and its frequency divided signals f2-fn in response to a self refresh signal sref, and generates a self refresh demand signal srefreq by using the fundamental period signal f1 and the frequency divided signals f2-fn, an internal voltage generation control signal generating means 200 which generates an internal voltage generation control signal Vgenctrl in response to the fundamental period signal f1 and its frequency divided signals f2-fn, and an internal voltage generating means 300 which generates the internal voltage Vint in response to the internal voltage generation control signal Vgenctrl. COPYRIGHT: (C)2005,JPO&NCIPI
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