| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.
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| 申请公布号 |
US2005158954(A1) |
申请公布日期 |
2005.07.21 |
| 申请号 |
US20050033624 |
申请日期 |
2005.01.13 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKAHASHI NOBUYOSHI |
| 分类号 |
H01L27/10;H01L21/336;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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