发明名称 |
Tri-gate transistors and methods to fabricate same |
摘要 |
Embodiments of the invention provide a method for effecting uniform silicon body height for silicon-on-insulator transistor fabrication. For one embodiment, a sacrificial oxide layer is disposed upon a semiconductor substrate. The oxide layer is etched to form a trench. The trench is then filled with a semiconductor material. The semiconductor material is then planarized with the remainder of the oxide layer and the remainder of the oxide layer is then removed. The semiconductor fins thus exposed are of uniform height to within a specified tolerance.
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申请公布号 |
US2005158970(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20040760028 |
申请日期 |
2004.01.16 |
申请人 |
CHAU ROBERT;DATTA SUMAN;DOYLE BRIAN S.;JIN BEEN-YIH |
发明人 |
CHAU ROBERT;DATTA SUMAN;DOYLE BRIAN S.;JIN BEEN-YIH |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):C30B1/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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