| 摘要 |
The present invention features use of PMOS devices (22, 24, 26, 28, 30, 32) to realize switches of an integrated circuit charge pump (20), while maintaining a maximum voltage drop (lower than VDD) on each transistor. The charge pump is a symmetrical structure that includes a pumping capacitor (34, 36) connected to a pumping node (48, 50), a first PMOS device (22, 28) connected to an input node (IN, 42), a second PMOS device (24, 30) connected to an output node (OUT, 44), a third PMOS (26, 32) device electrically communicating with the first PMOS device, and an auxiliary capacitor (38, 40) connected to the first PMOS device. |
