METHOD AND SYSTEM FOR MEASURING PERMITTIVITY OF DIELECTRIC LAYER OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring a permittivity of a thick dielectric layer showing a low dielectric constant on a semiconductor wafer.

SOLUTION: The method includes the following steps of: (a) providing a contacting means 6, which has a surface 20 that is made of a conductive material and is at least partially spherical and comes in contact with the upper surface 22 of the semiconductor wafer 10; (b) measuring the thickness of the dielectric layer 12 on the semiconductor wafer 10 that has a semiconductor material 14 below the dielectric layer 12; (c) keeping the partially spherical surface of the contacting means 6 supported to be separated from the semiconductor material 14 via the upper surface 22 of the semiconductor wafer 10 to form a capacitor; (d) giving an electrical stimulation to the contacting means 6 and to the semiconductor material 14 when the capacitor is formed; (e) measuring the capacitance of the capacitor from responses of the contacting means 6 and the semiconductor material 14 to the given electrical stimulus; and (f) determining a permittivity of the dielectric layer 12 as a function that is defined by the capacitance measured at the step (e) and the thickness of the dielectric layer 12 measured at the step (b).

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