| 摘要 |
PROBLEM TO BE SOLVED: To provide a metallization process for metallizing a blind via or a through via formed in a silicon, and provide a material system. SOLUTION: The process comprises a step of forming a composition, namely, a suspension with a small thermal expansion coefficient compared to pure metal (such as copper, silver, and gold); and a step of filling a via hole formed in the silicon 3 by using the suspension, namely, a paste, then sintering the suspension. As a result of the sintering, a highly conductive structure is formed, with the shrink of a capacity retained at a minimum, without forming any macroscopic void. The suspension is so selected that the thermal expansion coefficient of the suspension maintains a value close to the thermal expansion coefficient of the silicon 3. COPYRIGHT: (C)2005,JPO&NCIPI |
