| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated quantum thin-line transistor that can control the number of quantum thin lines, such as a silicon nanowire, and accurately control a position, is excellent in high-speed operability and low-noise characteristics, has a superior on/off ratio, and can be extremely miniaturized since only a narrow space is required. SOLUTION: A plurality of silicon nanowires 11 having a gate insulating film 12 on a side are separated in parallel one another for arrangement, and a gate electrode 13 is provided so that the plurality of silicon nano wires 11 can be buried around the silicon nanowires 11, thus obtaining the integrated quantum thin-line transistor having a columnar structure. Source, channel, and drain regions are formed in each silicon nanowire 11. Source and drain electrodes are formed around the source and drain regions so that they are buried. COPYRIGHT: (C)2005,JPO&NCIPI |
