| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon quantum dot having a nanosize minute, uniform characteristic. SOLUTION: The present invention is related to a method for forming a silicon quantum dot that is applicable to a semiconductor memory device, including the steps of sequentially forming a pad oxide film and a sacrifice insulation film onto a silicon substrate, selectively etching the sacrifice insulation film to form an inner frame, forming a spacer at a side of the inner frame, forming a silicon pattern by using the spacer as a mask and etching the silicon substrate to a specified thickness, forming a barrier film that covers the silicon pattern's top surface and side surface, anisotropically etching the substrate by using the barrier film as a mask, and performing oxidation thermal treatment on the anisotropically etched substrate. By so doing, a silicon quantum dot is formed that has a nanosize minute, uniform characteristic. COPYRIGHT: (C)2005,JPO&NCIPI
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