| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device where a distance between a substrate on which a device is formed and an inductor can be sufficiently kept and where a parasitic capacitance can be minimized, and to provide its manufacturing method. SOLUTION: The semiconductor device includes a first wafer where the inductor containing a via hole plug through a first semiconductor substrate is formed; and a second wafer where a logical element is formed on a second semiconductor substrate, an inductor connecting wiring is formed on its top surface, and where the via contact plug and the inductor connecting wiring are electrically connected by joining the first wafer on the second wafer. COPYRIGHT: (C)2005,JPO&NCIPI
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