发明名称 Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet
摘要 An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.
申请公布号 US2005156163(A1) 申请公布日期 2005.07.21
申请号 US20050074287 申请日期 2005.03.07
申请人 发明人 HIRAI KATSURA
分类号 G02F1/1368;H01L27/28;H01L35/24;H01L51/05;H01L51/10;H01L51/30;H01L51/40;(IPC1-7):H01L29/08 主分类号 G02F1/1368
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