发明名称 SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering target for forming a transparent electroconductive film that has five or more protrusions with a height of 20 nm or higher per unit square micrometer on the surface, and satisfies resistivity, heat resistance and moisture resistance, which are required to the transparent electroconductive film used for a touch panel. <P>SOLUTION: The sputtering target is made by using a sintered compact that consists of substantially indium, tin, magnesium and oxygen, and that comprises an In<SB>4</SB>Sn<SB>3</SB>O<SB>12</SB>phase having a fluorite structure of an intermediate compound of indium oxide and stannic oxide, and an In<SB>2</SB>O<SB>3</SB>phase having a bixbyte structure, so that the integrated intensity of an X-ray diffraction peak on a face (220) in the former can be 40% or higher of that on a face (211) in the latter. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005194594(A) 申请公布日期 2005.07.21
申请号 JP20040003425 申请日期 2004.01.08
申请人 TOSOH CORP 发明人 UCHIUMI KENTARO;TERAOKA HIDEKI;NAGASAKI YUICHI
分类号 C04B35/00;C04B35/495;C23C14/34 主分类号 C04B35/00
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