| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A simple method of manufacturing a semiconductor device including a thick and dense insulator layer having a uniform film thickness includes forming the insulator layer by repeatedly applying a liquid material to a conductive layer plural times.
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| 申请公布号 |
US2005157222(A1) |
申请公布日期 |
2005.07.21 |
| 申请号 |
US20050032135 |
申请日期 |
2005.01.11 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
TANAKA HIDEKI;YUDASAKA ICHIO;MIYASAKA MASAMI |
| 分类号 |
H01L21/768;G02F1/1333;G02F1/136;G02F1/1362;H01L21/316;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
H01L21/768 |
| 代理机构 |
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