| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent emitting-light luminance degradation due to an additional-electrode layer by eliminating the additional-electrode layer such as a translucent electrode layer since the resistance of a p-type gallium-nitride-based semiconductor layer itself can be reduced based on a method of manufacturing a gallium-nitride-based semiconductor light-emitting element. <P>SOLUTION: The method of manufacturing includes a step of sequentially forming an n-type gallium-nitride (GaN) based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer, on a substrate for growing a GaN-based semiconductor, a step of forming a contact-resistance improving layer composed of at least one kind of a metal selected from the group consisting of Au, Mg, Mn, Mo, Pd, Pt, Sn, Ti, and Zn, on the p-type GaN-based semiconductor layer, a step of heat-treating the p-type GaN-based semiconductor layer on which the contact-resistance improving layer is formed so that the element of the contact-resistance improving layer can be diffused to the p-type GaN-based semiconductor layer and the Ga element of the p-type GaN-based semiconductor layer can be solved in the solid phase of the contact-resistance improving layer, a step of removing the contact-resistance improving layer remaining on the upper surface of the p-type GaN-based semiconductor layer, and a step of forming p-side and n-side electrodes respectively connected to the p-type GaN-based semiconductor layer and the n-type GaN-based semiconductor layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
