VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a field effect transistor having a channel length controlled favorably by applying a carbon nanotube. SOLUTION: The field effect transistor employs the vertically oriented carbon nanotube as a transistor body, the carbon nanotube being formed by deposition within a vertical aperture, with an optional combination of several parallel nanotubes to produce quantized current drive, and an optional change in a chemical composition of a carbon material at the top or at the bottom to suppress short channel effect. COPYRIGHT: (C)2005,JPO&NCIPI