| 发明名称 |
Quantum well structure and semiconductor device using it and production method of semiconductor element |
| 摘要 |
A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well active layer has a laminated structure in which a barrier layer undoped region ((In<SUB>0.02</SUB>Ga<SUB>0.98</SUB>N layer 702 ), a quantum well layer (undoped In<SUB>0.02</SUB>Ga<SUB>0.8</SUB>N layer 703 ) and a barrier layer n-type region (n-type In<SUB>0.02</SUB>Ga<SUB>0.98</SUB>N layer 701 ) are formed in this order. The Si concentration of a barrier layer n-type region is up to 5E18 cm-3.
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| 申请公布号 |
US2005156153(A1) |
申请公布日期 |
2005.07.21 |
| 申请号 |
US20040503269 |
申请日期 |
2004.08.02 |
| 申请人 |
NEC CORPORATION |
发明人 |
FUTAGAWA NORIYUKI |
| 分类号 |
H01L21/205;H01L33/06;H01L33/16;H01L33/32;H01L33/36;H01S5/02;H01S5/22;H01S5/30;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01L29/06;H01L21/823 |
主分类号 |
H01L21/205 |
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