发明名称 Surface acoustic wave device
摘要 The present invention provides a surface acoustic wave device that allows a plurality of surface acoustic wave filters to be formed on a single chip and permits greater miniaturization. The surface acoustic wave device comprises a piezoelectric substrate, a first surface acoustic wave resonator formed on the piezoelectric substrate, and a second surface acoustic wave resonator formed on the piezoelectric substrate in the surface acoustic wave propagation direction of the first surface acoustic wave resonator. The positions in which the first and second surface acoustic wave resonators are formed on the piezoelectric substrate are in an at least partially overlapping relationship in a surface acoustic wave propagation region that is defined by virtually extending the respective openings of the first and second surface acoustic wave resonators. The surface acoustic wave device further comprises a part for dividing the overlap surface acoustic wave propagation region into an upper half and a lower half and for affording the phases of surface acoustic waves that are propagated by the first surface acoustic wave resonator a mutually antiphase relationship in the upper-half region and lower-half region thus divided.
申请公布号 US2005156687(A1) 申请公布日期 2005.07.21
申请号 US20050029500 申请日期 2005.01.06
申请人 FUJITSU MEDIA DEVICES LIMITED 发明人 MATSUDA SATORU;KAWACHI OSAMU
分类号 H03H9/25;H03H9/02;H03H9/145;H03H9/64;H03H9/72;(IPC1-7):H03H9/64 主分类号 H03H9/25
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