发明名称 |
Preheating of chemical vapor deposition precursors |
摘要 |
Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction process. Heating reactant gases prior to introduction to a reaction chamber may be used to improve physical characteristics of the resulting deposited layer, to improve the physical characteristics of the underlying substrate and/or to improve the thermal budget available for subsequent processing. One example includes the formation of a titanium nitride layer substantially free of ammonium chloride using reactant gases containing a titanium tetrachloride precursor and a ammonia precursor.
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申请公布号 |
US2005158997(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20050073798 |
申请日期 |
2005.03.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DERDERIAN GARO J.;MORRISON GORDON |
分类号 |
C23C16/34;C23C16/44;C23C16/452;C23C16/455;C23C16/52;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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