发明名称 |
Semiconductor memory cell and associated fabrication method |
摘要 |
A semiconductor memory cell and an associated fabrication method are provided in which a storage capacitor is connected to a selection transistor. The storage capacitor is formed in a trench of a semiconductor substrate. At the trench surface, a capacitor dielectric and an electrically conductive filling layer are formed thereon for realization of a capacitor counterelectrode. The filling layer has a projection that extends outside the trench as far as the drain region and is electrically connected thereto.
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申请公布号 |
US2005156218(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20050039745 |
申请日期 |
2005.01.18 |
申请人 |
NIRSCHL THOMAS;OLBRICH ALEXANDER;OSTERMAYR MARTIN |
发明人 |
NIRSCHL THOMAS;OLBRICH ALEXANDER;OSTERMAYR MARTIN |
分类号 |
H01L21/334;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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