| 摘要 |
PROBLEM TO BE SOLVED: To control temperature rise in semiconductor elements in the middle region of a chip without increasing the overall power loss in the semiconductor device having a plurality of bipolar semiconductor elements arranged therein. SOLUTION: The semiconductor device 102 has a plurality of gate electrode-provided vertical bipolar semiconductor elements 32-38. The depth level, whereat the crystal defect distribution of the semiconductor elements 32-34 located in the chip peripheral region 26 reaches the maximum in the p-type high-concentration drift region 42, is nearer to the middle of the thickness of the p-type high-concentration drift region 42 than the depth level whereat the crystal defect distribution of the semiconductor elements 36-38 located in the chip middle region reaches the maximum in the p-type high-concentration drift region 42. COPYRIGHT: (C)2005,JPO&NCIPI
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