FILM DEPOSITION METHOD, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a TiN film in which the corrosion of a substrate is reduced. SOLUTION: The method for depositing a film where titanium tetrachloride and ammonia are reacted to deposit a titanium nitride film on the substrate to be treated is provided with: a first step wherein titanium tetrachloride and ammonia are reacted in a feed rate-determining region to deposit a first titanium nitride layer on the substrate to be treated; and a second step wherein titanium tetrachloride and ammonia are reacted in a reaction rate-determining region to deposit a second titanium nitride layer on the first titanium nitride layer. COPYRIGHT: (C)2005,JPO&NCIPI