| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which is unnecessary for any sophisticated flow rate control, simple in structure, compact, inexpensive and easy in maintenance, a method for controlling an exhaust means of the thin film deposition apparatus, and a method for producing a substrate with a thin film deposited thereon. <P>SOLUTION: In the thin film deposition apparatus, high frequency electric field is generated between electrodes facing each other under the atmospheric pressure or the pressure in a vicinity of the atmospheric pressure to form a discharge space, a film-deposition gas and discharge gas to be fed in the discharge space is plasmatized, a thin film is deposited on a substrate by exposing the substrate to the plasmatized gas. The thin film deposition apparatus has an exhaust means to exhaust waste gas containing particles generated in a film deposition chamber. The exhaust means measures the state of floating particles and dust such as particles in the film deposition chamber, and controls the exhaust of a discharge means according to the result of measurement. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
