| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which parasitic components (inductance and capacitance) are reduced in high frequency regions. <P>SOLUTION: The semiconductor device comprises a pair of lead frames 1 and 2 facing each other, a sealing body 5 covering the pair of lead frames 1 and 2, a semiconductor element 3 mounted on the lead frame 1, and a conductive wire 4 connected with the lead frame 2 and the electrode of the semiconductor element 3 wherein at least one lead frame has R profile or taper profile at the inner end of the sealing body when viewed from the direction perpendicular to the major surface of the semiconductor element. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
