| 摘要 |
PROBLEM TO BE SOLVED: To easily specify the place of an OSF fault contained in the ingot of a silicon single crystal. SOLUTION: A copper decoration method is carried out to a wafer (a sample) cut out from the ingot. In the copper decoration method, copper is attached to a wafer surface by dipping the wafer in a copper plating liquid, and copper is diffused into the wafer by heating the wafer. In the copper decoration method, a copper compound is precipitated to the wafer surface and the fault in the wafer by cooling the wafer, and the copper compound is removed from the wafer surface by an etching. The wafer, to which the copper decoration method is carried out, is irradiated with infrared rays from an infrared ray source, and the wafer is image-picked up by an infrared camera. The fault is evaluated on the basis of a picked-up image. COPYRIGHT: (C)2005,JPO&NCIPI
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