| 摘要 |
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE = at least one selection from group of rare-earth metals, O = oxygen, N = nitrogen, P = phosphorus, Si = silicon and Ge = germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. |
