| 摘要 |
This method for film formation has a first step of forming a first insulation film, the essential component of which is a material having a first dielectric constant, on the surface of a semiconductor substrate and a second step of forming a second insulation film, the essential component of which is a material having a second dielectric constant larger than the first dielectric constant, on the first insulation film to be thicker than this first insulation film. Since the process of forming a film of a high dielectric constant material that constitutes the second insulation film is executed successively, following the formation of a barrier layer that is the first insulation film, it is possible to form a gate of a high dielectric constant material stable to the substrate. <IMAGE> |
