METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a polycrystalline silicon (poly-Si) film by which a gain size of crystal gains is increased. SOLUTION: The method for forming a polycrystalline silicon film by crystallization of amorphous silicon (a-Si) film by laser light irradiation comprises steps of: successively depositing a buffer film and an amorphous silicon film on a glass substrate; depositing a metallic film having a function for reflecting laser light on the rear face of the glass substrate; and doubly crystallizing the amorphous silicon film by irradiating the front face of the amorphous silicon film with laser light and allowing the laser light reflected by the metallic film to be absorbed into the amorphous silicon film again. Since the amorphous silicon film is double crystallized in the method, a polycrystalline silicon film including crystal grains having extremely large grain size is formed. COPYRIGHT: (C)2005,JPO&NCIPI