发明名称 DYNAMIC SEMICONDUCTOR MEMORY DEVICE AND POWER SAVING MODE OPERATING METHOD OF THIS DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a dynamic semiconductor memory device and a power saving mode operating method of this device. SOLUTION: This device is constituted of a memory cell array provided with a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines, a mode setting register inputting a mode setting code applied from the outside in accordance with a mode setting command and generating a power saving mode control signal for power saving mode operation, and an address control part decoding an address or a refresh address applied from the outside at the time of normal mode operation, selecting one word line out of the plurality of word lines, excluding the prescribed bit of an address or the refresh address applied from the outside at the time of power saving mode operation, decoding it, and selecting the prescribed word lines simultaneously out of the plurality of word lines. Therefore, a refresh period is extended at the refresh operation, and power consumption can be reduced by that a refresh time is reduced. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005196952(A) 申请公布日期 2005.07.21
申请号 JP20040368250 申请日期 2004.12.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KEI KEIKEN;KAN KEIKAN
分类号 G11C5/00;G11C7/00;G11C8/08;G11C8/18;G11C11/406;G11C11/408;(IPC1-7):G11C11/406 主分类号 G11C5/00
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