| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a system for peeling of the backside layer of a semiconductor device, thereby exposing a structure of an FEOL semiconductor of the device, in order to perform electric or physical probing (verification) or both of them later. SOLUTION: A window is formed in a backside substrate layer of the semiconductor. Parallel ion plasma is generated, and it is guided by a shield plate for focusing so as to be brought into contact with the semiconductor only through an internal window. The focused parallel ion plasma is brought into contact with the semiconductor only through the internal window, while simultaneously rotating and tilting the semiconductor by a temperature-controlled stage to uniformly remove the semiconductor, so that a semiconductor structure is exposed at a position of the semiconductor corresponding to a backside window. The function of the backside peeling of the present invention can be strengthened by chemical reaction-aided ion beam etching (CAIBE). COPYRIGHT: (C)2005,JPO&NCIPI
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