| 摘要 |
A method of fabricating a floating gate for a semiconductor device is disclosed and provided. According to this method, an undoped polycrystalline silicon layer is deposited on a tunnel oxide layer. The undoped polycrystalline silicon layer has a first thickness. Moreover, a doped polycrystalline silicon layer is deposited on the undoped polycrystalline silicon layer. The doped polycrystalline silicon layer has a second thickness. The undoped polycrystalline silicon layer and the doped polycrystalline silicon layer form the floating gate having a third thickness. In an embodiment, the semiconductor device is a flash memory device.
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