Semiconductor memory device with modified global input/output scheme

摘要

A semiconductor memory device including a main amplifier for amplifying an output from a bit line sensing amplifier and outputting the amplified output to a first data line; an input/output multiplexer connected to the first data line; a repeater connected to the first data line; an input/output write unit for receiving a data to be written and outputting the data to a second data line; and a write driver connected to the second data line for transferring the data on the second data line to the bit line sensing amplifier.