发明名称 |
High-voltage silicon controlled rectifier structure with improved punch through resistance |
摘要 |
When a high-voltage, such as from an ESD pulse, is placed across a silicon controlled rectifier, which includes an NPN transistor and a PNP transistor that is connected to the NPN transistor, the likelihood of punch through occurring between two regions of the rectifier is substantially reduced by forming the emitter of one transistor adjacent to the tails of the sinker down region of the other transistor.
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申请公布号 |
US6919588(B1) |
申请公布日期 |
2005.07.19 |
申请号 |
US20030650000 |
申请日期 |
2003.08.27 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;STRACHAN ANDY;HOPPER PETER J.;LINDORFER PHILIPP |
分类号 |
H01L27/02;H01L29/74;(IPC1-7):H01L29/74 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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