Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members

摘要

An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not lower than 1x10¹⁴Omega.cm, and a volume resistivity at 500° C. of not lower than 1x10⁸Omega.cm. An a-axis lattice constant of the aluminum nitride in the ceramic is not shorter than 3.112 angstrom and a c-axis lattice constant of the aluminum nitride is not shorter than 4.980 angstrom.