| 摘要 |
A semiconductor device comprising a nonvolatile memory element and a peripheral circuit including a field- effect transistor having an insulated gate, and a method for manufacturing the semiconductor device. A semiconductor device comprising a memory element having a high holding capability and a field-effect transistor having an insulated gate with a high drive current. A semiconductor device has a semiconductor substrate (1) having first and second regions (AR1, AR2), a floating gate structure (4, 5, 6, 7, 8) for a nonvolatile memory element formed on the first region, a control gate structure (14) coupled to the floating gate structure, and insulated gate electrodes (12, 14) for a logical circuit formed on the second region. The floating gate structure has a bird's beak larger than the insulated gate electrode.
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