Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film

摘要

A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl₄ gas, a silicon hydride gas and NH₃ gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl₄ gas, a silicon hydride gas, H₂ gas and N₂ gas are used as source gases for forming a TiSiN film by the plasma CVD process.