| 摘要 |
A ferroelectric capacitor having a ferroelectric film is formed on a conductive silicon substrate. The dielectric capacitor is covered with a first diffusion barrier film, and a second interlayer insulating film is formed on the first diffusion barrier film. A first metal wiring is formed on the second interlayer insulating film, and the first metal wiring is covered with a first buffer film. A second diffusion barrier film is formed on the first buffer film, and a third interlayer insulating film is formed on the second diffusion barrier film. A second metal wiring is formed on the third interlayer insulating film, and the second metal wiring is covered with a second buffer film. A third diffusion barrier film is formed on the second buffer film.
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