Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications

摘要

This invention is directed to pure and modified Ta₂O₅ thin films deposited on suitable substrate and methods for making these Ta₂O₅ thin films. These Ta₂O₅ thin films exhibit superior properties for microwave communication, dynamic random access memory and integrated electronic applications. The Ta₂O₅ thin films perform well in these types of technologies due to the Ta ₂O₅ thin film component which allows for high dielectric constants, low dielectric loss, and good temperature and frequency stability, thus making them particularly useful in high frequency microwave applications.