发明名称 Method for the solder-stop structuring of elevations on wafers
摘要 A method is provided for the solder-stop structuring of elevations on wafers, such as 3D contact structures in the form of resilient or compliant contact bumps, which are connected electrically via a metallization layer to a bonding pad on the wafer, the metallization layer extending over the 3D structure and consisting of a Cu/Ni layer which is covered with a Au layer. The present invention provides a method for the solder-stop structuring of elevations on wafers which can be implemented simply and reliably to produce a reliable solder stop and good flank protection of the 3D structure. According to the invention, a resist is deposited on the tip of a 3D structure and a solder stop layer is then deposited over the metallization, including the resist. The resist on the tip of the 3D structure, including the solder stop layer covering the resist, is subsequently removed so that the Au layer on the tip of the 3D structure is exposed.
申请公布号 US6919264(B2) 申请公布日期 2005.07.19
申请号 US20030656042 申请日期 2003.09.05
申请人 INFINEON TECHNOLOGIES AG 发明人 BRINTZINGER AXEL;UHLENDORF INGO;SCHENK ANDRE;WOLLANKE ALEXANDER
分类号 H01L21/44;H01L21/60;H01L23/485;(IPC1-7):H01L21/44 主分类号 H01L21/44
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